Godofredo García Salgado

According to our database, Godofredo García Salgado authored at least 6 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Effect of thermal annealing in H2 atmosphere of SiCxOy films obtained by HFCVD technique.

Juan Carlos Pérez Trinidad, Marco Antonio Vasquez-Agustin, Godofredo García Salgado, Román Romano-Trujillo, Fernando Lopez-Marcos, Heber Vilchis, Enrique Rosendo Andrés, José Juan Gervacio Arciniega, Orlando Cortazar Martínez, Antonio Coyopol Solís

Proceedings of the 20th International Conference on Electrical Engineering, 2023

2022

Isotherm Theoretical Study of the AlxGa1-xAsySb1-y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures.

Erick Gastellou, Rafael García, Ana M. Herrera, Antonio Ramos, Godofredo García Salgado, Mario Robles, Jorge A. Rodríguez, Yani D. Ramírez, Roberto C. Carrillo

Entropy, December, 2022

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors.

Gabriel Omar Mendoza Conde, José Alberto Luna López, Zaira Jocelyn Hernández Simón, José Álvaro David Hernández de la Luz, Godofredo García Salgado, Erick Gastellou Hernández, Haydee Patricia Martínez-Hernández, Javier Flores-Méndez

Sensors, 2022

2021

Tuning Wavelength of the Localized Mode Microcavity by Applying Different Oxygen Flows.

María R. Jiménez-Vivanco, Godofredo García Salgado, Franciso Morales-Morales, Antonio Coyopol, Lizeth Martínez, Jocelyn Faubert, J. Eduardo Lugo

TCCE, 2021

2020

Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity.

Francisco Ramírez-González, Godofredo García Salgado, Enrique Rosendo, Tomás Díaz, Fabiola Nieto-Caballero, Antonio Coyopol, Román Romano, Alberto Luna, Karim Monfil, Erick Gastellou

Sensors, 2020

2008

Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer.

Godofredo García Salgado, R. Hernández, Javier Martínez, Tomás Díaz, Héctor Juárez, Enrique Rosendo, Reina Galeazzi, A. García, G. Juárez

Microelectron. J., 2008