Hadis Morkoç

According to our database, Hadis Morkoç authored at least 15 papers between 1986 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Window for better reliability of nitride heterostructure field effect transistors.

Arvydas Matulionis, Juozapas Liberis, Emilis Sermuksnis, Linas Ardaravicius, Artur Simukovic, Cemil Kayis, Congyong Zhu, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Microelectron. Reliab., 2012

2010

Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers.

Ryoko Shimada, Hadis Morkoç

Proc. IEEE, 2010

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels.

Ümit Özgür, Huiyong Liu, Xing Li, Xianfeng Ni, Hadis Morkoç

Proc. IEEE, 2010

ZnO Devices and Applications: A Review of Current Status and Future Prospects.

Ümit Özgür, Daniel Hofstetter, Hadis Morkoç

Proc. IEEE, 2010

Challenges and Opportunities in GaN and ZnO Devices and Materials.

Hadis Morkoç, Jen-Inn Chyi, Alois Krost, Yasushi Nanishi, Donald J. Silversmith

Proc. IEEE, 2010

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors.

Jacob H. Leach, Hadis Morkoç

Proc. IEEE, 2010

Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET.

Qian Fan, Jacob H. Leach, Hadis Morkoç

Proc. IEEE, 2010

Growth of Bulk GaN and AlN: Progress and Challenges.

Vitaliy Avrutin, Donald J. Silversmith, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka, Hadis Morkoç

Proc. IEEE, 2010

Doping Asymmetry Problem in ZnO: Current Status and Outlook.

Vitaliy Avrutin, Donald J. Silversmith, Hadis Morkoç

Proc. IEEE, 2010

Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges.

Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Donald J. Silversmith, Hadis Morkoç

Proc. IEEE, 2010

Bulk ZnO: Current Status, Challenges, and Prospects.

Vitaliy Avrutin, Gene Cantwell, Jizhi Zhang, J. J. Song, Donald J. Silversmith, Hadis Morkoç

Proc. IEEE, 2010

n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor.

Ya. I. Alivov, Qian Fan, Xianfeng Ni, Sergey A. Chevtchenko, I. B. Bhat, Hadis Morkoç

Microelectron. Reliab., 2010

1995

Emerging gallium nitride based devices.

S. N. Mohammad, Arnel A. Salvador, Hadis Morkoç

Proc. IEEE, 1995

1993

Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers.

Hadis Morkoç, Boris Sverdlov, Guang-Bo Gao

Proc. IEEE, 1993

1986

Modulation-doped GaAs/(Al, Ga)As heterojunction field-effect transistors: MODFETs.

Timothy J. Drummond, William Ted Masselink, Hadis Morkoç

Proc. IEEE, 1986