Hanqing Wang

Orcid: 0000-0002-4517-2127

Affiliations:
  • Analog Devices, Beijing, China
  • University of Zhejiang, Institute of VLSI Design, China (former)


According to our database1, Hanqing Wang authored at least 5 papers between 2010 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

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Bibliography

2018
A 0.28mΩ-sensitivity 105dB-dynamic-range electrochemical impedance spectroscopy soc for electrochemical gas detection.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017
A 19 nV/√Hz Noise 2-µ: V Offset 75-/micro;A Capacitive-Gain Amplifier With Switched-Capacitor ADC Driving Capability.
IEEE J. Solid State Circuits, 2017

5.7 A 19nV/√Hz-noise 2µV-offset 75µA low-drift capacitive-gain amplifier with switched-capacitor ADC driving capability.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2011
Ultra low-FOM high-precision ΔΣ modulators with fully-clocked SO and zero static power quantizers.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2010
A 9µW 88dB DR fully-clocked switched-opamp ΔΣ modulator with novel power and area efficient resonator.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2010


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