Hanqing Wang
Orcid: 0000-0002-4517-2127Affiliations:
- Analog Devices, Beijing, China
- University of Zhejiang, Institute of VLSI Design, China (former)
According to our database1,
Hanqing Wang
authored at least 5 papers
between 2010 and 2018.
Collaborative distances:
Collaborative distances:
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Bibliography
2018
A 0.28mΩ-sensitivity 105dB-dynamic-range electrochemical impedance spectroscopy soc for electrochemical gas detection.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2017
A 19 nV/√Hz Noise 2-µ: V Offset 75-/micro;A Capacitive-Gain Amplifier With Switched-Capacitor ADC Driving Capability.
IEEE J. Solid State Circuits, 2017
5.7 A 19nV/√Hz-noise 2µV-offset 75µA low-drift capacitive-gain amplifier with switched-capacitor ADC driving capability.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2011
Ultra low-FOM high-precision ΔΣ modulators with fully-clocked SO and zero static power quantizers.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011
2010
A 9µW 88dB DR fully-clocked switched-opamp ΔΣ modulator with novel power and area efficient resonator.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2010