Hans-Martin Rein

According to our database, Hans-Martin Rein authored at least 19 papers between 1992 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO.

Nils Pohl, Tobias Klein, Klaus Aufinger, Hans-Martin Rein

IEEE J. Solid State Circuits, 2012

2009

SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency.

Nils Pohl, Hans-Martin Rein, Thomas Musch, Klaus Aufinger, Josef Hausner

IEEE J. Solid State Circuits, 2009

2005

Substrate coupling in a high-gain 30-Gb/s SiGe amplifier-modeling, suppression, and measurement.

Wolfgang Steiner, Hans-Martin Rein, Jürgen Berntgen

IEEE J. Solid State Circuits, 2005

2004

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz.

Hao Li, Hans-Martin Rein, Thomas Suttorp, Josef Böck

IEEE J. Solid State Circuits, 2004

2003

High-gain SiGe transimpedance amplifier array for a 12×10 Gb/s parallel optical-fiber link.

Alexander Schild, Hans-Martin Rein, Jens Müllrich, Lars Altenhain, Jürgen Blank, Karl Schrödinger

IEEE J. Solid State Circuits, 2003

Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology.

Hao Li, Hans-Martin Rein

IEEE J. Solid State Circuits, 2003

2002

A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits.

Matthias Rickelt, Hans-Martin Rein

IEEE J. Solid State Circuits, 2002

2000

High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links.

Jens Müllrich, Herbert Thurner, Ernst Müllner, Joseph F. Jensen, William E. Stanchina, Michael Kardos, Hans-Martin Rein

IEEE J. Solid State Circuits, 2000

1999

Physics- and process-based bipolar transistor modeling for integrated circuit design.

Michael Schröter, Hans-Martin Rein, Winfried Rabe, Reinhard Reimann, Hans-Joachim Wassener, Andreas Koldehoff

IEEE J. Solid State Circuits, 1999

SiGe driver circuit with high output amplitude operating up to 23 Gb/s.

R. Schmid, Thomas F. Meister, Mirjana Rest, Hans-Martin Rein

IEEE J. Solid State Circuits, 1999

1998

Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz.

Martin Pfost, Hans-Martin Rein

IEEE J. Solid State Circuits, 1998

1996

Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s.

Hans-Martin Rein, Michael Möller

IEEE J. Solid State Circuits, 1996

Modeling substrate effects in the design of high-speed Si-bipolar ICs.

Martin Pfost, Hans-Martin Rein, Thomas Holzwarth

IEEE J. Solid State Circuits, 1996

Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization.

Michael Neuhäuser, Hans-Martin Rein, Horst Wernz

IEEE J. Solid State Circuits, 1996

46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology.

Alfred Felder, Michael Möller, Josef Popp, Josef Böck, Hans-Martin Rein

IEEE J. Solid State Circuits, 1996

1995

Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator.

Michael Schröter, Hans-Martin Rein

IEEE J. Solid State Circuits, May, 1995

1994

A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links.

Hans-Martin Rein, Rolf Schmid, Peter Weger, Tony Smith, Thomas Herzog, Rudolf Lachner

IEEE J. Solid State Circuits, September, 1994

13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers.

Michael Möller, Hans-Martin Rein, Horst Wernz

IEEE J. Solid State Circuits, July, 1994

1992

Hochgeschwindigkeits-Schaltungen in Silizium-Bipolartechnologie / High-speed integrated circuits in silicon bipolar technology.

Hans-Martin Rein

it Inf. Technol., 1992