Lester F. Eastman

According to our database, Lester F. Eastman authored at least 5 papers between 2003 and 2010.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2010

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures.

Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy

Proc. IEEE, 2010

2009

Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT.

A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff

Microelectron. J., 2009

2003

Hot electron induced degradation of undoped AlGaN/GaN HFETs.

Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman

Microelectron. Reliab., 2003

The investigation of properties of electron transport in AlGaN/GaN heterostructures.

S. V. Danylyuk, Svetlana A. Vitusevich, B. Podor, A. E. Belyaev, A. Yu. Avksentyev, Vinayak Tilak, Joseph Smart, Alexei Vertiatchikh, Lester F. Eastman

Microelectron. J., 2003

High-power monolithic AlGaN/GaN HEMT oscillator.

Valery S. Kaper, Vinayak Tilak, Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Thomas R. Prunty, Lester F. Eastman, James R. Shealy

IEEE J. Solid State Circuits, 2003