Nilesh Goel

According to our database, Nilesh Goel authored at least 12 papers between 2014 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

rel-SLIFMEM: Design and analysis of a reliability-aware neuromorphic system.

Jani Babu Shaik, Sonal Singhal, Nilesh Goel, Atul Ranjan Srivastava, Siona Menezes Picardo

Integr., 2025

2024

Reliability-aware design of Integrate-and-Fire silicon neurons.

Jani Babu Shaik, Siona Menezes Picardo, Sonal Singhal, Nilesh Goel

Integr., January, 2024

2022

Enabling efficient rate and temporal coding using reliability-aware design of a neuromorphic circuit.

Siona Menezes Picardo, Jani Babu Shaik, Sonal Singhal, Nilesh Goel

Int. J. Circuit Theory Appl., December, 2022

Impact of various NBTI distributions on SRAM performance for FinFET technology.

Jani Babu Shaik, Sonal Singhal, Siona Menezes Picardo, Nilesh Goel

Integr., 2022

Reliability-aware design of temporal neuromorphic encoder for image recognition.

Jani Babu Shaik, Aadhitiya VS, Sonal Singhal, Nilesh Goel

Int. J. Circuit Theory Appl., 2022

Investigating the impact of BTI, HCI and time-zero variability on neuromorphic spike event generation circuits.

Jani Babu Shaik, Rohit Singh, Siona Menezes Picardo, Nilesh Goel, Sonal Singhal

CoRR, 2022

Design and Mathematical Modelling of Inter Spike Interval of Temporal Neuromorphic Encoder for Image Recognition.

Aadhitiya VS, Jani Babu Shaik, Sonal Singhal, Siona Menezes Picardo, Nilesh Goel

CoRR, 2022

2020

Analysis of SRAM metrics for data dependent BTI degradation and process variability.

Jani Babu Shaik, Sonal Singhal, Nilesh Goel

Integr., 2020

2018

Correlation of Dynamic and Static Metrics of SRAM Cell under Time-Zero Variability and After NBTI Degradation.

Sarthak Prakash Chaudhari, Jani Babu Shaik, Sonal Singhal, Nilesh Goel

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2018

2015

Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress.

Nilesh Goel, Tejas Naphade, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages.

Nilesh Goel, P. Dubey, J. Kawa, S. Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs.

Nilesh Goel, Kaustubh Joshi, S. Mukhopadhyay, N. Nanaware, Souvik Mahapatra

Microelectron. Reliab., 2014