Ruifen Nie

According to our database, Ruifen Nie authored at least 2 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of seven.
• Erdős number of six.

2025

Effect of polarized AlGaN/GaN structure-based field plate on the electric properties of a 4H-SiC Schottky barrier diode.

Feng He, Wenting Zhang, Xiamin Hao, Xinyu Li, Ruifen Nie, Rui Jin

Microelectron. J., 2025

2023

Optimal design of short circuit robustness for high voltage and high power IGBTs.

Rui Jin, Niannian Ge, Ruifen Nie, Baohua Tian, Feng He, Xiamin Hao

Proceedings of the 15th IEEE International Conference on ASIC, 2023