Runhao Han

According to our database, Runhao Han authored at least 1 paper in 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer.

Runhao Han, Jia Yang, Tao Hu, Mingkai Bai, Yajing Ding, Xianzhou Shao, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye

Proceedings of the IEEE International Reliability Physics Symposium, 2025