S. Y. Siah

According to our database1, S. Y. Siah authored at least 6 papers between 2008 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2022
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2012
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.
Microelectron. Reliab., 2012

2010
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors.
Microelectron. Reliab., 2010

2009
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.
Microelectron. Reliab., 2009

2008
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.
Microelectron. Reliab., 2008

A study of the linearity between I<sub>on</sub> and log I<sub>off</sub> of modern MOS transistors and its application to stress engineering.
Microelectron. Reliab., 2008


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