Saied Tehrani

According to our database, Saied Tehrani authored at least 3 papers between 2003 and 2010.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2010

Status and prospect for MRAM technology.

Saied Tehrani

Proceedings of the 2010 IEEE Hot Chips 22 Symposium, Stanford, CA, USA, August 22-24, 2010, 2010

2003

Magnetoresistive random access memory using magnetic tunnel junctions.

Saied Tehrani, Jon M. Slaughter, Mark Deherrera, Brad N. Engel, Nicholas D. Rizzo, John Salter, Mark Durlam, Renu W. Dave, Jason Janesky, Brian Butcher, Ken Smith, Greg Grynkewich

Proc. IEEE, 2003

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects.

Mark Durlam, Peter J. Naji, Asim Omair, Mark Deherrera, John Calder, Jon M. Slaughter, Brad N. Engel, Nicholas D. Rizzo, Greg Grynkewich, Brian Butcher, Clarence Tracy, Ken Smith, Kelly W. Kyler, J. Jack Ren, Jaynal A. Molla, William A. Feil, Rick G. Williams, Saied Tehrani

IEEE J. Solid State Circuits, 2003