Sanghyun Ban

According to our database, Sanghyun Ban authored at least 3 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device.

Seongjae Heo, Dongmin Kim, Wooseok Choi, Sanghyun Ban, Ohhyuk Kwon, Hyunsang Hwang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications.

Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 10¹¹) and Low Drift Characteristics.

Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022