Saniya S. Wani

According to our database, Saniya S. Wani authored at least 4 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2025

Bridging the Performance and Reliability Gap of GaN-on-Si with GaN-on-SiC RF HEMTs by Efficient Electric Field Management Using a Novel p-type Oxide Passivation.

Mohammad Ateeb Munshi, Saniya Syed Wani, Mehak Ashraf Mir, Anup Thakare, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN Heterostructures.

Rasik Rashid Malik, Simran R. Karthik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Mehak Ashraf Mir, Saniya Syed Wani, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

Mehak Ashraf Mir, Anup Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs.

Rajarshi Roy Chaudhuri, Vipin Joshi, Saniya S. Wani, Simran R. Karthik, Rasik Rashid Malik, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024