Mayank Shrivastava
Orcid: 0000-0003-4775-7978
According to our database1,
Mayank Shrivastava
authored at least 49 papers
between 2011 and 2023.
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Bibliography
2023
Expressive and Efficient Representation Learning for Ranking Links in Temporal Graphs.
Proceedings of the ACM Web Conference 2023, 2023
OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated State.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the Evolution in Computational Intelligence, 2023
Proceedings of the International Conference on Algorithmic Learning Theory, 2023
2022
Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs.
IEEE Access, 2022
Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the Device Research Conference, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 Device Research Conference, 2020
2019
First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Proceedings of the 31st International Conference on VLSI Design and 17th International Conference on Embedded Systems, 2018
Proceedings of the 2018 International Conference on Management of Data, 2018
On the ESD behavior of a-Si: H based thin film transistors: Physical insights, design and technological implications.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017
Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017
2016
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package.
Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016
2015
Proceedings of the 2015 IEEE International Conference on Data Science and Advanced Analytics, 2015
2011
Proceedings of the 20th International Conference on World Wide Web, 2011