V. V. N. Obreja

According to our database, V. V. N. Obreja authored at least 2 papers between 2003 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic.

V. V. N. Obreja, C. Codreanu, D. Poenar, Octavian Buiu

Microelectron. Reliab., 2011

2003

Surface leakage current related failure of power silicon devices operated at high junction temperature.

K. I. Nuttall, Octavian Buiu, V. V. N. Obreja

Microelectron. Reliab., 2003