Yoonsang Park
  According to our database1,
  Yoonsang Park
  authored at least 2 papers
  between 2023 and 2024.
  
  
Collaborative distances:
Collaborative distances:
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Bibliography
  2024
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.
    
  
    Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
    
  
  2023
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing.
    
  
    Neuromorph. Comput. Eng., June, 2023