Zhenrong Li

Orcid: 0000-0003-4120-1442

According to our database1, Zhenrong Li authored at least 22 papers between 2011 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
A 6 to 18 GHz flat high gain power amplifier using mismatch-consistent MCR technique in 40-nm CMOS.
Microelectron. J., January, 2024

Design and analysis of high-resolution CMOS digitally controlled oscillator with tunable transformer.
Microelectron. J., January, 2024

A 28-47.5 GHz broadband power amplifier using improved MCR technique in 40-nm CMOS.
Microelectron. J., 2024

2023
A low jitter sub-sampling phase-locked loop with sampling thermal noise cancellation technique.
Int. J. Circuit Theory Appl., January, 2023

2022
A 22.7- to 44.2-GHz Darlington dual-injection injection-locked frequency tripler with >35dBc harmonic rejection for multiband 5G communication systems.
Int. J. Circuit Theory Appl., 2022

2021
An X-Band 5-Bit Active Phase Shifter Based on a Novel Vector-Sum Technique in 0.18μm SiGe BiCMOS.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Design of high-isolation and low-loss single pole double throw switch based on the triple-coupled transformer for ultra-wideband phased array systems.
Int. J. Circuit Theory Appl., 2021

A 21.6-30.3 GHz injection-locked frequency tripler with Darlington injection for 5G communication systems.
Int. J. Circuit Theory Appl., 2021

A 0.6 V 2.7 mW 94.3% locking range injection-locked frequency divider using modified varactor-less Colpitts oscillator topology.
IET Circuits Devices Syst., 2021

Flat-High-Gain Design and Noise Optimization in SiGe Low-Noise Amplifier for S-K Band Applications.
Circuits Syst. Signal Process., 2021

A Digital Controlled Accurate Linear-in-dB Variable Gain Amplifier Based on Current-Steering Structure with Compensation Circuit.
Circuits Syst. Signal Process., 2021

2020
A 0.3-6 ​GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 ​dB in 0.18-μm SiGe BiCMOS process.
Microelectron. J., 2020

2019
A 2-20 GHz SiGe HBT single-stage cascode LNA with linearity enhancement.
Microelectron. J., 2019

2017
A 12-27 GHz SiGe BiCMOS VGA with phase shift variation compensation.
Microelectron. J., 2017

2014
A 5-bit lumped 0.18-μm CMOS step attenuator with low insertion loss and low phase distortion in 3-22 GHz applications.
Microelectron. J., 2014

A SiGe LC-ladder low noise amplifier with base resistance match, gain and noise flatness for UWB applications.
Microelectron. J., 2014

A SiGe HBT low noise amplifier using on-chip notch filter for K band wireless communication.
Microelectron. J., 2014

A broadband 5-bit CMOS step attenuator in small area with low insertion loss.
IEICE Electron. Express, 2014

A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion.
IEICE Electron. Express, 2014

2013
An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.
IEEE Trans. Circuits Syst. I Regul. Pap., 2013

2012
A new type of low power read circuit in EEPROM for UHF RFID.
Microelectron. J., 2012

2011
AES Algorithm of Improving WPAN Throughput.
Wirel. Pers. Commun., 2011


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