Zikang Ge

According to our database, Zikang Ge authored at least 1 paper in 2026.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2026

Unveiling the role of bulk ionized charge in single-event leakage degradation of SiC Schottky diodes.

Zikang Ge, Xinyu Xu, Jinhao Hu, Xingze Yang, Leshan Qiu, Chenrui Zhang, Yunbiao Zhao, Jianming Xue

Microelectron. J., 2026