A. G. Lind

According to our database, A. G. Lind authored at least 1 paper in 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2017

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.

Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin

Microelectron. Reliab., 2017