T. S. Kang

According to our database, T. S. Kang authored at least 3 papers between 2012 and 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2017

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts.

Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren

Microelectron. Reliab., 2017

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.

Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin

Microelectron. Reliab., 2017

2012

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.

Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren

Microelectron. Reliab., 2012