A. Magrì

According to our database, A. Magrì authored at least 2 papers between 2007 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress.

Paolo Magnone, Giacomo Barletta, A. Magrì

Microelectron. Reliab., 2018

2007

Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance.

Filippo Chimento, Salvatore Musumeci, Angelo Raciti, S. Sannino, A. Magrì, Maurizio Melito, F. Zara

Proceedings of the Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, 2007