Giacomo Barletta

According to our database, Giacomo Barletta authored at least 4 papers between 2005 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress.

Paolo Magnone, Giacomo Barletta, A. Magrì

Microelectron. Reliab., 2018

2016

Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology.

Giacomo Barletta, V. C. Ngwan

Microelectron. Reliab., 2016

2007

Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique.

Giacomo Barletta, Giuseppe Currò

Microelectron. Reliab., 2007

2005

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS.

Giacomo Barletta, Giuseppe Currò

Microelectron. Reliab., 2005