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Ahsanur Rahman

Affiliations:
  • Intel, Folsom, CA, USA


According to our database1, Ahsanur Rahman authored at least 1 paper in 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2023
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density.
[BibTeX]
[DOI]
Ali Khakifirooz
,
Eduardo Anaya
,
Sriram Balasubrahrmanyam
,
Geoff Bennett
,
Daniel Castro
,
John Egler
,
Kuangchan Fan
,
Rifat Ferdous
,
Kartik Ganapathi
,
Omar Guzman
,
Chang-Wan Ha
,
Rezaul Haque
,
Vinaya Harish
,
Majid Jalalifar
,
Owen Jungroth
,
Sung-Taeg Kang
,
Golnaz Karbasian
,
Jee-Yeon Kim
,
Siyue Li
,
Aliasgar S. Madraswala
,
Srivijay Maddukuri
,
Amr Mohammed
,
Shanmathi Mookiah
,
Shashi Nagabhushan
,
Binh Ngo
,
Deep Patel
,
Sai Kumar Poosarla
,
Naveen Prabhu V
,
Carlos Quiroga
,
Shantanu Rajwade
,
Ahsanur Rahman
,
Jalpa Shah
,
Rohit S. Shenoy
,
Ebenezer Tachie-Menson
,
Archana Tankasala
,
Sandeep Krishna Thirumala
,
Sagar Upadhyay
,
Krishnasree Upadhyayula
,
Ashley Velasco
,
Nanda Kishore Babu Vemula
,
Bhaskar Venkataramaiah
,
Jiantao Zhou
,
Bharat Pathak
,
Pranav Kalavade
Proceedings of the IEEE International Solid- State Circuits Conference, 2023


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