Atsuro Kobayashi

According to our database, Atsuro Kobayashi authored at least 3 papers between 2015 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

12× bit-error acceptable, 300× extended data-retention time, value-aware SSD with vertical 3D-TLC NAND flash memories for image recognition.

Yoshiaki Deguchi, Toshiki Nakamura, Atsuro Kobayashi, Ken Takeuchi

Proceedings of the 2017 IEEE Custom Integrated Circuits Conference, 2017

2016

Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers.

Atsuro Kobayashi, Tsukasa Tokutomi, Ken Takeuchi

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2015

7.7 Enterprise-grade 6x fast read and 5x highly reliable SSD with TLC NAND-flash memory for big-data storage.

Tsukasa Tokutomi, Masafumi Doi, Shogo Hachiya, Atsuro Kobayashi, Shuhei Tanakamaru, Ken Takeuchi

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015