Austin Hickman

According to our database, Austin Hickman authored at least 3 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality.

Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates.

Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2022

2021

Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz.

Austin Hickman, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing, Debdeep Jena

Proceedings of the Device Research Conference, 2021