B. S. Poling

According to our database, B. S. Poling authored at least 4 papers between 2015 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of six.

2017

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation.

B. S. Poling, Glen David Via, K. D. Bole, E. E. Johnson, J. M. McDermott

Microelectron. Reliab., 2017

2016

Evidence for causality between GaN RF HEMT degradation and the E_C-0.57 eV trap in GaN.

A. R. Arehart, A. Sasikumar, Glen David Via, B. S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2016

2015

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps.

A. Sasikumar, A. R. Arehart, Glen David Via, B. Winningham, B. S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2015

Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing.

B. S. Poling, J. L. Brown, E. R. Heller, B. Stumpff, J. A. Beckman, A. M. Hilton

Microelectron. Reliab., 2015