Brian Markman

According to our database, Brian Markman authored at least 5 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications.

Logan Whitaker, Brian Markman, Mark J. W. Rodwell

Proceedings of the Device Research Conference, 2023

2021

Transistors for 100-300GHz Wireless.

Mark J. W. Rodwell, Brian Markman, Yihao Fang, Logan Whitaker, Hsin-Ying Tseng, Ahmed S. H. Ahmed

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz.

Brian Markman, Simone Tommaso Suran Brunelli, Matthew Guidry, Logan Whitaker, Mark J. W. Rodwell

Proceedings of the Device Research Conference, 2021

2019

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors.

Jonathan P. Sculley, Yihao Fang, Brian Markman, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder

Proceedings of the Device Research Conference, 2019

Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers.

Jonathan P. Sculley, Brian Markman, Utku Soylu, Yihao Fang, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019