Diang Xing

According to our database, Diang Xing authored at least 3 papers between 2019 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs.

Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs.

Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Design Strategies for Rugged SiC Power Devices.

Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal

Proceedings of the IEEE International Reliability Physics Symposium, 2019