Anant K. Agarwal

According to our database, Anant K. Agarwal authored at least 12 papers between 1992 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.

Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs.

Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology.

Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran K. Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman A. Fayed

Proceedings of the 65th IEEE International Midwest Symposium on Circuits and Systems, 2022

Defects in 4H-SiC epilayers affecting device yield and reliability.

Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications.

Emran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs.

Susanna Yu, Marvin H. White, Anant K. Agarwal

IEEE Access, 2021

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology.

Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emaran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Marvin H. White, Ayman A. Fayed, Anant K. Agarwal

Proceedings of the 64th IEEE International Midwest Symposium on Circuits and Systems, 2021

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.

Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs.

Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs.

Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Design Strategies for Rugged SiC Power Devices.

Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal

Proceedings of the IEEE International Reliability Physics Symposium, 2019

1992

A study of single-phase to three-phase cycloconverters using PSPICE.

Vineeta Agrawal, Anant K. Agarwal, Krishna Kant

IEEE Trans. Ind. Electron., 1992