Dongxin Tan

According to our database, Dongxin Tan authored at least 4 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors.

Jie Wen, Fei Xiao, Zheng-Dong Luo, Dongxin Tan, Xuetao Gan, Dawei Zhang, Zhufei Chu, Yinshui Xia, Yan Liu, Genquan Han

Sci. China Inf. Sci., 2025

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity.

Tongtong Wang, Yong Zhang, Danyang Yao, Zhi Jiang, Dongxin Tan, Jie Wen, Qiyu Yang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

Sci. China Inf. Sci., 2025

2024

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic.

Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

Sci. China Inf. Sci., 2024

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.

Qiyu Yang, Zheng-Dong Luo, Fei Xiao, Junpeng Zhang, Dawei Zhang, Dongxin Tan, Xuetao Gan, Yan Liu, Zhufei Chu, Yinshui Xia, Genquan Han

Sci. China Inf. Sci., 2024