Zheng-Dong Luo

According to our database, Zheng-Dong Luo authored at least 5 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges.

Xiao Yu, Ni Zhong, Yan Cheng, Tianjiao Xin, Qing Luo, Tiancheng Gong, Jiezhi Chen, Jixuan Wu, Ran Cheng, Zhiyuan Fu, Kechao Tang, Jin Luo, Tianling Ren, Fei Xue, Lin Chen, Tianyu Wang, Xueqing Li, Xiuyan Li, Ping Wang, Xinqiang Wang, Jie Sun, Anquan Jiang, Peiyuan Du, Bing Chen, Chengji Jin, Jiajia Chen, Haoji Qian, Wei Mao, Siying Zheng, Huan Liu, Haiwen Xu, Can Liu, Zhihao Shen, Xiaoxi Li, Bochang Li, Zheng-Dong Luo, Jiuren Zhou, Yan Liu, Yue Hao, Genquan Han

Sci. China Inf. Sci., 2025

Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors.

Jie Wen, Fei Xiao, Zheng-Dong Luo, Dongxin Tan, Xuetao Gan, Dawei Zhang, Zhufei Chu, Yinshui Xia, Yan Liu, Genquan Han

Sci. China Inf. Sci., 2025

Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements.

Chenyu Liu, Yibo Wang, Wenhui Xu, Shuqi Huang, Chunxiao Yu, Zeyu Yang, Xiaole Jia, Xiaoxi Li, Bochang Li, Zheng-Dong Luo, Cizhe Fang, Yan Liu, Tiangui You, Xin Ou, Genquan Han

Sci. China Inf. Sci., 2025

2024

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic.

Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

Sci. China Inf. Sci., 2024

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.

Qiyu Yang, Zheng-Dong Luo, Fei Xiao, Junpeng Zhang, Dawei Zhang, Dongxin Tan, Xuetao Gan, Yan Liu, Zhufei Chu, Yinshui Xia, Genquan Han

Sci. China Inf. Sci., 2024