Genquan Han

Orcid: 0000-0001-5140-4150

According to our database1, Genquan Han authored at least 22 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators.
IEEE Trans. Circuits Syst. II Express Briefs, June, 2024

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.
Microelectron. J., January, 2024

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.
Sci. China Inf. Sci., 2024

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K.
Sci. China Inf. Sci., 2024

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition.
Sci. China Inf. Sci., 2024

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.
Adv. Intell. Syst., November, 2023

A compact model of DC <i>I</i>-<i>V</i> characteristics for depleted Ga<sub>2</sub>O<sub>3</sub> MOSFETs.
Microelectron. J., October, 2023

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics.
Sci. China Inf. Sci., October, 2023

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor.
Sci. China Inf. Sci., June, 2023

Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory.
Sci. China Inf. Sci., April, 2023

Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors.
Proceedings of the International Conference on IC Design and Technology, 2023

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022
4H-SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications.
Microelectron. J., 2022

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling.
Proceedings of the International Conference on IC Design and Technology, 2022

Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise.
Proceedings of the International Conference on IC Design and Technology, 2022

Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification.
IEEE Trans. Neural Networks Learn. Syst., 2021

High mobility germanium-on-insulator p-channel FinFETs.
Sci. China Inf. Sci., 2021

Recent progress of integrated circuits and optoelectronic chips.
Sci. China Inf. Sci., 2021

2020
Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection.
Sci. China Inf. Sci., 2020


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