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Genquan Han

Orcid: 0000-0001-5140-4150

According to our database¹, Genquan Han authored at least 45 papers between 2020 and 2026.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book In proceedings Article PhD thesis Dataset Other

Links

On csauthors.net:

Bibliography

2026

Collaborative Design of FeRAM via a Joint Ferroelectric Device and Circuit Analysis.

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IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., March, 2026

FPGA-based hardware accelerator designed for convolutional residual spiking neural networks.

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Sci. China Inf. Sci., 2026

SPICA: Energy-Efficient SRAM-Based Multi-Precision Multi-Mode Compute-in-Memory Accelerator for AI Inference.

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Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

FeRAM-Based Reconfigurable Strong PUF with Ultra-Low Power and Enhanced Attack Resilience.

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Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

Efficient LLM Inference on ARM via Hardware-Aware Operator Co-design and Heuristic Mixed-Precision Search.

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Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

A Monolithic 5×14-Channel Cryo-CMOS Multiplexer for Scalable Control of Trapped-Ion Qubits.

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Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

2025

Multichannel Radar Forward-Looking Super-Resolution Imaging Method Based on Structured Sparsity.

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IEEE Trans. Geosci. Remote. Sens., 2025

A Weighted Low-Rank and Sparse Constraint-Based Multichannel Radar Forward-Looking Imaging Method.

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IEEE J. Sel. Top. Appl. Earth Obs. Remote. Sens., 2025

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges.

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Sci. China Inf. Sci., 2025

An AND-type 1T-FeFET array with robust write and read operations.

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Sci. China Inf. Sci., 2025

Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors.

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Sci. China Inf. Sci., 2025

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity.

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Sci. China Inf. Sci., 2025

Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements.

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Sci. China Inf. Sci., 2025

A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction.

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Sci. China Inf. Sci., 2025

Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition.

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Sci. China Inf. Sci., 2025

OPAMP-Free Ferroelectric Capacitive Computing-in-Memory Accelerator for Energy-Efficient Binary Neural Networks.

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Proceedings of the 38th IEEE International System-on-Chip Conference, 2025

Hardware-Aware Optimization of Large Language Models for Enhanced Throughput on Arm CPUs.

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Proceedings of the 7th IEEE International Conference on Artificial Intelligence Circuits and Systems, 2025

Circuit-Agent: A Large Language Model Based Circuit Agent Framework for Analog/Mixed-signal Circuit Design Automation.

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Proceedings of the 7th IEEE International Conference on Artificial Intelligence Circuits and Systems, 2025

Optimizing Inference Performance for Large Language Models on ARMv9 Architecture.

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Proceedings of the 7th IEEE International Conference on Artificial Intelligence Circuits and Systems, 2025

2024

A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators.

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IEEE Trans. Circuits Syst. II Express Briefs, June, 2024

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.

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Microelectron. J., January, 2024

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.

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Sci. China Inf. Sci., 2024

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic.

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Sci. China Inf. Sci., 2024

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.

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Sci. China Inf. Sci., 2024

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K.

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Sci. China Inf. Sci., 2024

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition.

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Sci. China Inf. Sci., 2024

Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum.

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Ruoying Kanyang

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Sci. China Inf. Sci., 2024

Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range.

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Proceedings of the 37th IEEE International System-on-Chip Conference, 2024

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET.

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Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications.

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Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

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Adv. Intell. Syst., November, 2023

A compact model of DC <i>I</i>-<i>V</i> characteristics for depleted Ga<sub>2</sub>O<sub>3</sub> MOSFETs.

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Microelectron. J., October, 2023

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics.

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Sci. China Inf. Sci., October, 2023

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor.

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Sci. China Inf. Sci., June, 2023

Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory.

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Sci. China Inf. Sci., April, 2023

Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors.

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Proceedings of the International Conference on IC Design and Technology, 2023

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology.

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Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

4H-SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications.

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Microelectron. J., 2022

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling.

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Proceedings of the International Conference on IC Design and Technology, 2022

Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise.

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Proceedings of the International Conference on IC Design and Technology, 2022

Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations.

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Proceedings of the International Conference on IC Design and Technology, 2022

2021

Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification.

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IEEE Trans. Neural Networks Learn. Syst., 2021

High mobility germanium-on-insulator p-channel FinFETs.

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Sci. China Inf. Sci., 2021

Recent progress of integrated circuits and optoelectronic chips.

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Sci. China Inf. Sci., 2021

2020

Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection.

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Sci. China Inf. Sci., 2020

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