Ekmel Özbay

Orcid: 0000-0003-2953-1828

According to our database1, Ekmel Özbay authored at least 13 papers between 2009 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2023
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices.
Microelectron. J., 2023

Optimization of ASE Light Source Design for Enhancement of Wavelength Stability.
Proceedings of the 2023 IEEE SENSORS, Vienna, Austria, October 29 - Nov. 1, 2023, 2023

2022
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications.
Int. J. Circuit Theory Appl., 2022

2021
Accurate Isolation Networks in Quadrature Couplers and Power Dividers.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications.
IET Circuits Devices Syst., 2021

A Transparent All-Dielectric Multifunctional Nanoantenna Emitter Compatible With Thermal Infrared and Cooling Scenarios.
IEEE Access, 2021

2016
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.
Sensors, 2016

2014
Plasmonic nanoparticle based nanobiosensors and nanophotodetectors.
Proceedings of the 16th International Conference on Transparent Optical Networks, 2014

2011
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructures.
Microelectron. Reliab., 2011

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al<sub>0.22</sub>Ga<sub>0.78</sub>N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods.
Microelectron. Reliab., 2011

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures.
Microelectron. Reliab., 2011

Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes.
Microelectron. Reliab., 2011

2009
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs.
Microelectron. J., 2009


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