Ekmel Özbay
Orcid: 0000-0003-2953-1828
According to our database1,
Ekmel Özbay authored at least 16 papers
between 2009 and 2026.
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Bibliography
2026
2025
The Origin of Gate Degradation Under HTRB Operation: Buffer Engineering to Suppress Impact Ionization in GaN HEMT.
IEEE Access, 2025
2024
Robustness of GaN on SiC low-noise amplifiers in common source and cascode configurations for <i>X</i>-band applications.
Int. J. Circuit Theory Appl., August, 2024
2023
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices.
Microelectron. J., 2023
Proceedings of the 2023 IEEE SENSORS, Vienna, Austria, October 29 - Nov. 1, 2023, 2023
2022
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications.
Int. J. Circuit Theory Appl., 2022
2021
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications.
IET Circuits Devices Syst., 2021
A Transparent All-Dielectric Multifunctional Nanoantenna Emitter Compatible With Thermal Infrared and Cooling Scenarios.
IEEE Access, 2021
2016
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.
Sensors, 2016
2014
Proceedings of the 16th International Conference on Transparent Optical Networks, 2014
2011
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructures.
Microelectron. Reliab., 2011
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al<sub>0.22</sub>Ga<sub>0.78</sub>N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods.
Microelectron. Reliab., 2011
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures.
Microelectron. Reliab., 2011
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes.
Microelectron. Reliab., 2011
2009
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs.
Microelectron. J., 2009