Mahmut Can Soydan

According to our database, Mahmut Can Soydan authored at least 2 papers between 2025 and 2026.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2026

Effects of Donor Impurities on RF Performance of AlGaN/GaN HEMTs.

Amir Ali Joya, Abdulkadir Gürbüz, Mahmut Can Soydan, Amir Ghobadi, Ekmel Özbay

IEEE Access, 2026

2025

The Origin of Gate Degradation Under HTRB Operation: Buffer Engineering to Suppress Impact Ionization in GaN HEMT.

Mahmut Can Soydan, Amir Ali Joya, Amir Ghobadi, Ekmel Özbay

IEEE Access, 2025