Elangovan Mani

According to our database, Elangovan Mani authored at least 3 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2025

A Variation-Tolerant, Stable, Low-Power 6T SRAM Cell in 32-nm CNTFET Technology.

Elangovan Mani, Ahmed Elbarbary, Mohammed A. El-Meligy, Haitham A. Mahmoud

Circuits Syst. Signal Process., April, 2025

2024

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM.

Erfan Abbasian, Maryam Nayeri, Elangovan Mani

Circuits Syst. Signal Process., August, 2024

2022

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology.

Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi

Circuits Syst. Signal Process., 2022