F. Medjdoub

According to our database, F. Medjdoub authored at least 4 papers between 2014 and 2017.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2017

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation.

Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2017

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness.

R. Pecheux, R. Kabouche, E. Dogmus, A. Linge, E. Okada, M. Zegaoui, F. Medjdoub

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2014

Ultrathin barrier GaN-on-Silicon devices for millimeter wave applications.

F. Medjdoub

Microelectron. Reliab., 2014

High performance high reliability AlN/GaN DHFET.

F. Medjdoub, E. Okada, Bertrand Grimbert, D. Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014