Carlo De Santi

According to our database1, Carlo De Santi authored at least 35 papers between 2011 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Online presence:

On csauthors.net:

Bibliography

2022
Modeling Hot-Electron Trapping in GaN-based HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Full Optical Contactless Thermometry Based on LED Photoluminescence.
IEEE Trans. Instrum. Meas., 2021

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Current crowding as a major cause for InGaN LED degradation at extreme high current density.
Proceedings of the IECON 2021, 2021

Charge Trapping in GaN Power Transistors: Challenges and Perspectives.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Current induced degradation study on state of the art DUV LEDs.
Microelectron. Reliab., 2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.
Microelectron. Reliab., 2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.
Microelectron. Reliab., 2018

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress.
Microelectron. Reliab., 2018

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes.
Microelectron. Reliab., 2018

Positive and negative threshold voltage instabilities in GaN-based transistors.
Microelectron. Reliab., 2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.
Microelectron. Reliab., 2018

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits.
Microelectron. Reliab., 2018

Degradation of vertical GaN FETs under gate and drain stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation.
Microelectron. Reliab., 2017

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density.
Microelectron. Reliab., 2017

Long-term degradation of InGaN-based laser diodes: Role of defects.
Microelectron. Reliab., 2017

2016
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes.
Microelectron. Reliab., 2016

Degradation of InGaN-based LEDs related to charge diffusion and build-up.
Microelectron. Reliab., 2016

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs.
Microelectron. Reliab., 2016

2015
Failure causes and mechanisms of retrofit LED lamps.
Microelectron. Reliab., 2015

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects.
Microelectron. Reliab., 2015

Long-term degradation mechanisms of mid-power LEDs for lighting applications.
Microelectron. Reliab., 2015

2014
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.
Microelectron. Reliab., 2014

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms.
Microelectron. Reliab., 2014

2013
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes.
Microelectron. Reliab., 2013

2011
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency.
Microelectron. Reliab., 2011


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