Farid Medjdoub

According to our database, Farid Medjdoub authored at least 6 papers between 2014 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs.

Lyes Ben Hammou, François Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, Farid Medjdoub, Gilles Patriarche

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2023

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs.

Ajay Shanbhag, Sruthi M. P, Farid Medjdoub, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Short-term reliability of high performance Q-band AlN/GaN HEMTs.

Riad Kabouche, Kathia Harrouche, Etienne Okada, Farid Medjdoub

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness.

R. Pecheux, R. Kabouche, E. Dogmus, A. Linge, Etienne Okada, M. Zegaoui, Farid Medjdoub

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2014

High performance high reliability AlN/GaN DHFET.

Farid Medjdoub, Etienne Okada, Bertrand Grimbert, Damien Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014