Nathalie Malbert

According to our database, Nathalie Malbert authored at least 20 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.

Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.

Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat

Microelectron. Reliab., 2017

2016

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.

H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert

Microelectron. Reliab., 2016

2015

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.

M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert

Microelectron. Reliab., 2015

2013

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques.

W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet

Microelectron. Reliab., 2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat

Microelectron. Reliab., 2013

2012

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.

Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux

Microelectron. Reliab., 2012

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.

Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini

Microelectron. Reliab., 2010

2009

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.

Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui

Microelectron. Reliab., 2009

2008

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.

Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet

Microelectron. Reliab., 2008

2007

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC.

Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut

Microelectron. Reliab., 2007

2006

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.

A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul

Microelectron. Reliab., 2006

2005

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.

Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez

Microelectron. Reliab., 2005

2004

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors.

Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul

Microelectron. Reliab., 2004

2003

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.

Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren

Microelectron. Reliab., 2003

2002

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.

Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust

Microelectron. Reliab., 2002

2001

Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.

Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut

Microelectron. Reliab., 2001