Fumiya Hattori

According to our database, Fumiya Hattori authored at least 3 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

Gate Drive Circuit Suitable for a GaN Gate Injection Transistor.

Fumiya Hattori, Yuta Yanagisawa, Jun Imaoka, Masayoshi Yamamoto

IEEE Access, 2023

2017

Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz.

Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto

IET Circuits Devices Syst., 2017

2012

Proposal and analysis of gate drive circuit suitable for GaN-FET.

Fumiya Hattori, Masayoshi Yamamoto

Proceedings of the 38th Annual Conference on IEEE Industrial Electronics Society, 2012