G.-J. Kim

According to our database, G.-J. Kim authored at least 4 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip.

H. Park, G.-J. Kim, N.-J. Kim, J. Ahn, T. You, Y. Kang, M. Yoon, S. Lee, N.-H. Lee, S. Hwang, YC Hwang, SB. Ko, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

A Critical Investigation of Hot Carrier Degradation in Low VTNMOSFETs in DRAM.

N. Choudhury, S. Lee, D. Son, G. Yang, G.-J. Kim, N.-H. Lee, Y. C. Hwang, SB. Ko, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology.

Sunhang Lee, Nam-Hyun Lee, G.-J. Kim, J. Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, SB. Ko, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology.

Nam-Hyun Lee, Sunhang Lee, S.-H. Kim, G.-J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2022