Nam-Hyun Lee

According to our database¹, Nam-Hyun Lee authored at least 10 papers between 2016 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

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Bibliography

2024

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications.

[BibT_eX]

[DOI]

IEEE Access, 2024

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning.

[BibT_eX]

[DOI]

IEEE Access, 2024

2022

Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Effect of DC/AC stress on the reliability of cell capacitor in DRAM.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

2016

Channel width dependence of AC stress on bulk nMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Degradation of pMOSFETs due to hot electron induced punchthrough.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Nam-Hyun Lee

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