G. Sjöblom

According to our database, G. Sjöblom authored at least 1 paper in 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO₂ and ZrO₂ high-kappa dielectrics.

Stephan Abermann, J. K. Efavi, G. Sjöblom, Max C. Lemme, Jörgen Olsson, Emmerich Bertagnolli

Microelectron. Reliab., 2007