Guansheng Yuan

According to our database, Guansheng Yuan authored at least 1 paper in 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃ Gate Dielectric.

Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao

IEEE Access, 2020