Jincheng Zhang

According to our database, Jincheng Zhang authored at least 31 papers between 2008 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Design and Optimization of Fractional-Turn Transformer With Low Core Loss and Profile.

Wenbao Han, Sheng-Lei Zhao, Longyang Yu, Shouzheng Zhang, Fangzuo Zhao, Haobin Wei, Daoyuan Li, Xuejing Sun, Wei Mu, Zheyuan Yu, Shuzhen You, Yue Hao, Jincheng Zhang

IEEE Trans. Ind. Electron., June, 2026

Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy.

Yan-Ning Zhang, Haidi Wu, Haoran Zhang, Shiyu Li, Xinchen Ji, Zhichun Yang, Xinbo Zhang, Ling Bai, Juncheng Zheng, Dong Wang, Yue Hao, Jing Ning, Jincheng Zhang

Sci. China Inf. Sci., 2026

First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs.

Jincheng Zhang, Shudong Huo, Zhengxing Zhang, Mengjiao Xiang, Menghan Zheng, Shen Liu, Yachao Zhang, Xiufeng Song, Hong Zhou, Kui Dang, Jing Ning, Yue Hao

Sci. China Inf. Sci., 2026

2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time.

Yitao Feng, Hong Zhou, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Yue Hao, Jincheng Zhang

Sci. China Inf. Sci., 2026

2025

Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters.

Longyang Yu, Sheng-Lei Zhao, Xuejing Sun, Wei Mu, Xiufeng Song, Shuzhen You, Yue Hao, Jincheng Zhang

IEEE Trans. Ind. Electron., December, 2025

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations.

Yitao Feng, Hong Zhou, Sami Alghamdi, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Saud Wasly, Yue Hao, Jincheng Zhang

Sci. China Inf. Sci., 2025

2024

A 12V-to-1V Outphase-Interleaved SC Hybrid Converter With Enhanced Inductor De-Energizing Slew Rate and Adaptive Deadtime Control.

Xiongjie Zhang, Xinman Li, Anyang Zhao, Yang Jiang, Weihang Zhang, Jincheng Zhang, Rui Paulo Martins, Pui-In Mak

IEEE Trans. Circuits Syst. II Express Briefs, May, 2024

Two-dimensional materials for future information technology: status and prospects.

Hao Qiu, Zhihao Yu, Tiange Zhao, Qi Zhang, Mingsheng Xu, Peifeng Li, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Yiqi Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Yu Fu, Jingshu Guo, Pengwen Guo, Yue Hao, Jun He, Xiao He, Jingyi Hu, Weida Hu, Zehua Hu, Xinyue Huang, Ziyang Huang, Ali Imran, Ziqiang Kong, Jia Li, Qian Li, Weisheng Li, Lei Liao, Bilu Liu, Can Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Liwei Liu, Sheng Liu, Yuan Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Jing Ning, Anlian Pan, Tian-Ling Ren, Haowen Shu, Litao Sun, Yue Sun, Quanyang Tao, Ziao Tian, Dong Wang, Hao Wang, Haomin Wang, Jialong Wang, Junyong Wang, Wenhui Wang, Xingjun Wang, Yeliang Wang, Yuwei Wang, Zhenyu Wang, Yao Wen, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Xiong Xiong, Jeffrey Xu, Tao Xu, Yang Xu, Liu Yang, Yi Yang, Yuekun Yang, Lei Ye, Yu Ye, Bin Yu, Ting Yu, Hui Zeng, Guangyu Zhang, Hongyun Zhang, Jincheng Zhang, Kai Zhang, Tao Zhang, Xinbo Zhang, Yanfeng Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou, Shaohua Kevin Zhou, Yuxuan Zhu, Deren Yang, Yi Shi, Han Wang, Xinran Wang

Sci. China Inf. Sci., 2024

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz.

Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2024

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability.

Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang, Jing Ning, Hong Zhou, Jincheng Zhang

Sci. China Inf. Sci., 2024

Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design.

Wei Zhu, Yi-Xing He, Hao-Nan Li, Xian-Qin Liu, Siwen Zhang, Lei Wang, Jiang Zhu, Yue-Qi Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma

IEEE Access, 2024

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure.

Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

$\beta$-Ga2O3-on-SiC RF MOSFETs $\beta$.

Min Zhou, Hong Zhou, Jincheng Zhang, Yue Hao

Proceedings of the IEEE Region 10 Conference, 2024

2023

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity.

Ren Huang, Weihang Zhang, Jincheng Zhang, Chunxu Su, Xi Liu, Liyu Fu, Yue Hao

Sci. China Inf. Sci., June, 2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao

Sci. China Inf. Sci., February, 2023

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage.

Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao

Proceedings of the Device Research Conference, 2023

2022

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate.

Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei, Zhongyang Li, Zhongxu Wang, Qing Tang, Qing Yang, Yinhe Wu, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2022

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs.

Yinhe Wu, Jincheng Zhang, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Chao Duan, Dujun Zhao, Weihang Zhang, Zhihong Liu, Yue Hao

Sci. China Inf. Sci., 2022

Unidirectional p-GaN gate HEMT with composite source-drain field plates.

Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2022

Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping.

Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma

Adv. Intell. Syst., 2022

2021

Recent progress of integrated circuits and optoelectronic chips.

Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li

Sci. China Inf. Sci., 2021

All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors.

Yanshuang Ba, Sunjie HuangFu, Miaomiao Li, Junxiao Ma, Weidong Zhu, Dazheng Chen, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.

Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao

IEEE Trans. Ind. Electron., 2020

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics.

Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao

IEEE Access, 2020

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃ Gate Dielectric.

Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao

IEEE Access, 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao

IEEE Access, 2020

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress.

Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2015

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance.

Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuo-Chen Shi, Yue Hao

IEICE Electron. Express, 2015

2014

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao

Microelectron. Reliab., 2014

2010

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor.

Jincheng Zhang, Zhiming Li, Yue Hao, Hao Wang, Peixian Li

Sci. China Inf. Sci., 2010

2008

The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content.

Jinfeng Zhang, Yue Hao, Jincheng Zhang, JinYu Ni

Sci. China Ser. F Inf. Sci., 2008