Guo Ming Xia

Orcid: 0000-0002-9871-9210

According to our database1, Guo Ming Xia authored at least 12 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2024
Low-Noise Quality Factor Tuning in Nondegenerate MEMS Gyroscope Without Dedicated Tuning Electrode.
IEEE Trans. Ind. Electron., April, 2024

2020
Expanding Bias-instability of MEMS Silicon Oscillating Accelerometer Utilizing AC Polarization and Self-Compensation.
Sensors, 2020

2018
A Sub-0.1°/h Bias-Instability Split-Mode MEMS Gyroscope With CMOS Readout Circuit.
IEEE J. Solid State Circuits, 2018

An Ultra-Low-Power Third-Order Frequency-to-Digital Converter for FM MEMS Gyroscope.
Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018

2017
A 0.23-µg Bias Instability and 1-µg/√Hz Acceleration Noise Density Silicon Oscillating Accelerometer With Embedded Frequency-to-Digital Converter in PLL.
IEEE J. Solid State Circuits, 2017

A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit.
IEEE J. Solid State Circuits, 2017

2016
A 0.23 µg bias instability and 1.6 µg/Hz<sup>1/2</sup> resolution silicon oscillating accelerometer with build-in Σ-Δ frequency-to-digital converter.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

Thermal drift optimization for silicon microgyroscope.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016

An on-chip thermal stress evaluation method for silicon resonant accelerometer.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016

2015
A Sub-µg Bias-Instability MEMS Oscillating Accelerometer With an Ultra-Low-Noise Read-Out Circuit in CMOS.
IEEE J. Solid State Circuits, 2015

27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

A 0.57°/h bias instability 0.067°/√h angle random walk MEMS gyroscope with CMOS readout circuit.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2015


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