Guojian Ding

According to our database1, Guojian Ding authored at least 2 papers between 2024 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2025
Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT.
Sci. China Inf. Sci., 2025

2024
Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN.
Sci. China Inf. Sci., 2024


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