Heiner Ryssel

According to our database, Heiner Ryssel authored at least 11 papers between 1985 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC.

Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey

Microelectron. Reliab., 2013

2011

Investigation of the reliability of 4H-SiC MOS devices for high temperature applications.

Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2011

2007

Quantitative oxide charge determination by photocurrent analysis.

Mathias Rommel, Anton J. Bauer, Heiner Ryssel

Microelectron. Reliab., 2007

2005

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.

Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2005

2003

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.

Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2003

2001

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices.

S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel

Microelectron. Reliab., 2001

Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.

Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2001

Reliability of ultrathin nitrided oxides grown in low pressure N₂O ambient.

Matthias Beichele, Anton J. Bauer, Heiner Ryssel

Microelectron. Reliab., 2001

1998

Monte Carlo simulation of silicon amorphization during ion implantation.

Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1998

1990

Simulation of silicon semiconductor processing.

Peter Pichler, Heiner Ryssel

Eur. Trans. Telecommun., 1990

1985

COMPOSITE -- A Complete Modeling Program of Silicon Technology.

Jürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1985