J. P. Xu

According to our database1, J. P. Xu authored at least 14 papers between 2003 and 2016.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2016
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH<sub>3</sub>-plasma treated yittrium-oxynitride as interfacial passivation layer.
Microelectron. Reliab., 2016

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric.
Microelectron. Reliab., 2016

2015
A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric.
Microelectron. Reliab., 2015

2014
Finding needles in haystacks: linking scientific names, reference specimens and molecular data for Fungi.
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Database J. Biol. Databases Curation, 2014

2010
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode.
Microelectron. Reliab., 2010

2009
A study on the improved programming characteristics of flash memory with Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> stacked tunneling dielectric.
Microelectron. Reliab., 2009

2008
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects.
Microelectron. Reliab., 2008

Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric.
Microelectron. Reliab., 2008

Effects of Ti content and wet-N<sub>2</sub> anneal on Ge MOS capacitors with HfTiO gate dielectric.
Microelectron. Reliab., 2008

A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric.
Microelectron. Reliab., 2008

2007
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.
Microelectron. Reliab., 2007

Gate leakage properties of MOS devices with tri-layer high-k gate dielectric.
Microelectron. Reliab., 2007

2004
Interfacial properties and reliability of SiO<sub>2</sub> grown on 6H-SiC in dry O<sub>2</sub> plus trichloroethylene.
Microelectron. Reliab., 2004

2003
Enhanced reliability for low-temperature gate dielectric of MOS devices by N<sub>2</sub>O or NO plasma nitridation.
Microelectron. Reliab., 2003


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