J. W. McPherson

According to our database, J. W. McPherson authored at least 9 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations.

Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

Degradation Monitoring - from a Vision to Reality.

Evelyn Landman, Shai Cohen, Noam Brousard, Raanan Gewirtzman, Inbar Weintrob, Eyal Fayne, Yahel David, Yuval Bonen, Omer Niv, Shai Tzroia, Alex Burlak, J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors.

J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Understanding the underlying degradation physics for proper time-to-failure distribution selection.

J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2012

Time dependent dielectric breakdown physics - Models revisited.

J. W. McPherson

Microelectron. Reliab., 2012

2007

Reliability Trends with Advanced CMOS Scaling and The Implications for Design.

J. W. McPherson

Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007

2006

Reliability challenges for 45nm and beyond.

J. W. McPherson

Proceedings of the 43rd Design Automation Conference, 2006

2004

Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown.

J. W. McPherson

Microelectron. Reliab., 2004

2001

Scaling-Induced Reductions in CMOS Reliability Margins and the Escalating Need for Increased Design-In Reliability Efforts.

J. W. McPherson

Proceedings of the 2nd International Symposium on Quality of Electronic Design (ISQED 2001), 2001