Satyaki Ganguly

According to our database, Satyaki Ganguly authored at least 6 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

GaN HEMTs Design and Modeling for 5G.

Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations.

Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.

Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).

Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression.

Bruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.

Donald A. Gajewski, Satyaki Ganguly, Scott T. Sheppard, Simon Wood, Jeff B. Barner, Jim W. Milligan, John Palmour

Microelectron. Reliab., 2018